Low- temperature PZT thin-film ferroelectric memories fabricated on SiO2/Si and glass substrates

Title: Low- temperature PZT thin-film ferroelectric memories fabricated on SiO2/Si and glass substrates
Authors: D.H. Minh
N.V. Lo
N.H. Duc
B.N.Q. Trinh
Keywords: PZT;Thin-film transistor;Ferroelectric;Sol-gel;ITO
Issue Date: 2016
Publisher: ĐHQGHN
Abstract: In a ferroelectric-gate thin film transistor memory (FGT) type structure, the gate-insulator layer is extremely important for inducing the charge when accumulating or depleting. We concentrated on the application of low-temperature PZTfilms crystallized at 450, 500 and 550 C, instead of at conventional high temperatures ( 600 C). Investigation of the crystalline structure and electrical properties indicated that the PZTfilm, crystallized at 500 C, was suitable for FGT fabrication because of a high (111) orien-tation, large remnant polarization of 38 aC/cm 2 on SiO2/Si substrate and 17.8 aC/cm 2 on glass, and low leakage current of 10- 6A/cm 2 . In sequence, we successfully fabricated FGT with all processes below 500 C on a glass substrate, whose operation exhibits a memory window of 4 V, ON/OFF current ratio of 10 5 , field-effect mobility of 0.092 cm 2 V- 1 s- 1 , and retention time of 1 h
Description: p. 75-79
URI: http://repository.vnu.edu.vn/handle/VNU_123/58325
ISSN: 2468-2284
Appears in Collections:Advanced Materials and Devices

Nhận xét

Bài đăng phổ biến từ blog này

Áp dụng phương pháp 5S vào hoạt động lưu trữ tại các cơ quan của UBND huyện Thường Tín : Luận văn ThS. Kinh doanh: 60 34 01

Mechanism of TCO thin film removal process using near-infrared ns pulse laser Plasma shielding effect on irradiation direction

Pháp luật quyền của người cao tuổi ở Việt Nam hiện nay. : Luận văn ThS. Pháp luật về quyền con người (chuyên ngành đào tạo thí điểm)